Batch micropackaging by compression-bonded wafer-wafer transfer

被引：19

作者：

Maharbiz, MM ^{[1
]}

Cohn, MB ^{[1
]}

Howe, RT ^{[1
]}

Horowitz, R ^{[1
]}

Pisano, AP ^{[1
]}

机构：

[1] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA

来源：

MEMS '99: TWELFTH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 1999年

关键词：

D O I：

10.1109/MEMSYS.1999.746876

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Wafer-wafer transfer of microstructures is demonstrated by gold bump compression bonding. The process is performed at room temperature; 300 degrees C-plus is tolerated subsequently. 4-mu m bump bonds, transferred polysilicon resonators, vacuum-sealed micropackages, and getter structures have been fabricated, as well as multi-level structures built up by successive aligned transfers. Pull strengths of approximately 7x10(7) Pa have been measured. 95% yield has been observed in chip-scale transfers, across multiple designs. Sealed micro-packages tolerate external pressures of at least 7.2x10(6) Pa without leakage or observable damage.

引用

页码：482 / 489

页数：8

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