Resonant transport in Nb/GaAs/AlGaAs heterostructures: Realization of the de Gennes-Saint-James model

被引：32

作者：

Giazotto, F ^{[1
]}

Pingue, P

Beltram, F

Lazzarino, M

Orani, D

Rubini, S

Franciosi, A

机构：

[1] NEST, INFM, I-56126 Pisa, Italy

[2] Scuola Normale Super Pisa, I-56126 Pisa, Italy

[3] Lab Nazl TASC, INFM, I-34012 Trieste, Italy

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.87.216808

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Resonant transport is demonstrated in a hybrid superconductor-semiconductor heterostructure junction grown by molecular beam epitaxy on GaAs. This heterostructure realizes the model system introduced by de Gennes and Saint-James in 1963 [P. G. de Gennes and D. Saint-James, Phys. Lett. 4, 151 (1963)]. At low temperatures a single marked resonance peak is shown superimposed to the characteristic Andreev-dominated subgap conductance. The observed magnetotransport properties are successfully analyzed within the random matrix theory of quantum transport, and ballistic effects are included by directly solving the Bogoliubov-de Gennes equations.

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页码：216808 / 1

页数：4

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