Characterization of NiO thin films deposited by reactive sputtering

被引：70

作者：

Hotovy, I

Buc, D

Hascik, S

Nennewitz, O

机构：

[1] Slovak Univ Technol Bratislava, Dept Microelect, Bratislava 81219, Slovakia

[2] Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia

[3] Tech Univ Ilmenau, Inst Werkstoffe, D-98684 Ilmenau, Germany

来源：

VACUUM | 1998年 / 50卷 / 1-2期

关键词：

D O I：

10.1016/S0042-207X(98)00011-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nickel oxide (NiO) thin films were deposited by de reactive magnetron sputtering Ni in an Ar+O-2 mixed atmosphere at room temperature on unheated Si substrates. The oxygen content in the gas was varied from 10 to 50% and its effect on the deposition rate, structural, composition and electrical properties of the films were studied using thickness measurement, X-ray diffraction, transmission electron microscopy, Rutherford backscattering spectrometry and resistivity measurement. A correlation between process parameters and film properties was established. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：41 / 44

页数：4

共 6 条

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