InGaAs/InAlAs/AlAs heterostructure barrier varactors for harmonic multiplication

被引:16
作者
Melique, X [1 ]
Carbonell, J [1 ]
Havart, R [1 ]
Mounaix, P [1 ]
Vanbesien, O [1 ]
Lippens, D [1 ]
机构
[1] Univ Sci & Technol Lille, UMR 9929, Int Elect & Microelect Nord, F-59652 Villeneuve, France
来源
IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1998年 / 8卷 / 07期
关键词
harmonic multiplier; heterostructure; varactor;
D O I
10.1109/75.701383
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this letter, we report on the radio frequency (RF) characterization up to 110 GHz of probeable high-performance heterostructure barrier varactors fabricated from InP-based strained epilayers, By making use of a dual step-like barrier scheme, the voltage handling is as high as 12 V whereas the capacitance ratio at 85 GHz achieves 5:1 for a zero-bias capacitance of 1 fF/mu m(2) without deviation in the frequency band investigated. Good agreement between calculated and measured scattering parameters is found on the basis of electromagnetic simulation of diode embedding.
引用
收藏
页码:254 / 256
页数:3
相关论文
共 6 条
  • [1] BRADLEY RF, 1997, P 8 INT S SPAC TER T
  • [2] QUANTUM-BARRIER-VARACTOR DIODES FOR HIGH-EFFICIENCY MILLIMETER-WAVE MULTIPLIERS
    KOLLBERG, E
    RYDBERG, A
    [J]. ELECTRONICS LETTERS, 1989, 25 (25) : 1696 - 1698
  • [3] KOLLBERG E, 1992, IEEE T MICROWAVE THE, P831
  • [4] High performance InP-based heterostructure barrier varactors in single and stack configuration
    Lheurette, E
    Mounaix, P
    Salzenstein, P
    Mollot, F
    Lippens, D
    [J]. ELECTRONICS LETTERS, 1996, 32 (15) : 1417 - 1418
  • [5] ANALYSIS OF A 170-GHZ FREQUENCY DOUBLER WITH AN ARRAY OF PLANAR DIODES
    TUOVINEN, J
    ERICKSON, NR
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1995, 43 (04) : 962 - 968
  • [6] VANIPEREN BB, 1971, P IEEE, P1032