Role of incorporated sulfur into the surface of Cu(InGa)Se2 thin-film absorber

被引：85

作者：

Nagoya, Y ^{[1
]}

Kushiya, K ^{[1
]}

Tachiyuki, M ^{[1
]}

Yamase, O ^{[1
]}

机构：

[1] Showa Shell Sekiyu KK, Cent R&D Lab ARL, Kanagawa 2430206, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 67卷 / 1-4期

关键词：

Cu(InGa)Se; solar cell; sulfur; sulfurization;

D O I：

10.1016/S0927-0248(00)00288-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

High-performance Cu(InGa)Se-2 (CIGS) thin-film absorbers with an intentionally graded band-gap structure have been fabricated by a simple two-stage method using In/Cu-Ga/Mo stacked precursors and H2Se gas. Additional sulfurization step to form a thin Cu(InGa)(SeS)(2) (CIGSS) surface layer on the absorber is necesarry to improve the device performance. In order to understand the role of S incorporated into CIGS absorber, approaches with S are discussed. One approach is carried out by changing the condition of our absorber formation process. It is verified to be possible to incorporate more S into the CIGS absorber, but difficult to improve the device performance with higher S contained CIGS absorbers because of decrease in FF. The incorporated S is concluded to be effective to improve the pn heterojunction quality due to the passivation of surface and grain boundary of CIGS absorber through the formation of a thin CIGSS surface layer. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：247 / 253

页数：7

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