Precharging strategy to accelerate spin-transfer switching below the nanosecond

被引:34
作者
Devolder, T
Chappert, C
Crozat, P
Tulapurkar, A
Suzuki, Y
Miltat, J
Yagami, K
机构
[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
[2] Natl Inst Adv Ind Sci & Technol, NanoElect Res Inst, Tsukuba, Ibaraki 3058568, Japan
[3] Univ Paris 11, CNRS, UMR 8502, Phys Solides Lab, F-91405 Orsay, France
[4] Sony Corp, Semicond Technol Dev Grp, MSNC, Atsugi, Kanagawa, Japan
关键词
D O I
10.1063/1.1853517
中图分类号
O59 [应用物理学];
学科分类号
摘要
We compared different ways of inducing magnetization switching by spin momentum transfer in pillar shaped CoFe/Cu/CoFe trilayers using sub-ns-current pulses. In comparison with switching induced by a single sub-ns pulse, precharging the device with a bias current prior to the application of the pulse proved to lower the required peak current. Precharging is efficient for pulses ranging from 2 ns down to at least 200 ps. Simulations indicate that the bias current prepares the magnetization in a precession state that provides an enhanced susceptibility to the spin torque of the pulsed current. The precession settling time is typically 2 ns, hence the precharging strategy loses its efficiency for longer pulses, in agreement with experiments. 0 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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