HfO2/AlGaN/GaN structures with HfO2 deposited at ultra low pressure using an e-beam

被引：13

作者：

Tokranov, V.

Rumyantsev, S. L.

Shur, M. S.

Gaska, R.

Oktyabrsky, S.

Jain, R.

Pala, N. ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Troy, NY 12180 USA

[2] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

[3] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

[4] Sensor Elect Technol Inc, Columbia, SC 29209 USA

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2007年 / 1卷 / 05期

关键词：

D O I：

10.1002/pssr.200701136

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show that HfO2/AlGaN/GaN structures with HfO2 layer deposited using an e-beam in ultra high vacuum are suitable for field effect transistors. The dielectric constant of the HfO2 was found epsilon(Hfo)> 23-24, which is close to the highest reported values for this material. The leakage current did not exceed 10(-4) A/cm(2) at the threshold voltage. The comparison of the losses in the samples with and without HfO2 indicates low concentration of the interface traps. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：199 / 201

页数：3

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