Microwave AlGaN/GaN HFEVs

被引：84

作者：

Trew, RJ ^{[1
]}

Bilbro, GL ^{[1
]}

Kuang, W ^{[1
]}

Liu, Y ^{[1
]}

Yin, H ^{[1
]}

机构：

[1] N Carolina State Univ, Dept ECE, Raleigh, NC 27695 USA

来源：

IEEE MICROWAVE MAGAZINE | 2005年 / 6卷 / 01期

关键词：

D O I：

10.1109/MMW.2005.1417998

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The microwave performance potential and status of device development of AlGaN/GaN HFETs is discussed. Microwave power amplifiers fabricated from these devices offer superior RF power performance particularly at elevated temperatures, relative to comparable components fabricated from GaAs metal semiconductors FETs or Si transistors. Devices are being developed for use in X-band radars, and RF performance is rapidly improving. The results show that HFET devices experience several physical effects that can limit performance.

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页码：56 / 66

页数：11

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