共 12 条
- [1] ESTIMATION OF INDIUM-TO-GERMANIUM AND GALLIUM-TO-GERMANIUM SPUTTERING YIELD RATIOS USING COSPUTTERING DEPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (06): : 3149 - 3151
- [2] PROPERTIES OF GALLIUM-DOPED HYDROGENATED AMORPHOUS-GERMANIUM [J]. PHYSICAL REVIEW B, 1995, 52 (07): : 4974 - 4985
- [3] COMEDI D, IN PRESS J NONCRYST
- [4] DRUSEDAU T, 1994, MATER RES SOC S P, V297, P717
- [6] EQUILIBRIUM DEFECT DENSITY IN HYDROGENATED AMORPHOUS-GERMANIUM [J]. APPLIED PHYSICS LETTERS, 1994, 65 (13) : 1683 - 1685
- [7] STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF INDIUM-DOPED ALPHA-GE-H THIN-FILMS [J]. PHYSICAL REVIEW B, 1995, 52 (07): : 4965 - 4973
- [8] A CHEMICAL-BOND APPROACH TO DOPING, COMPENSATION AND PHOTOINDUCED DEGRADATION IN AMORPHOUS-SILICON [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (04): : 243 - 250
- [9] STREET RA, 1991, HYDROGENATED AMORPHO, pCH5
- [10] DETAILED INVESTIGATION OF DOPING IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM [J]. PHYSICAL REVIEW B, 1987, 35 (11): : 5666 - 5701