Zn2LiGaO4, Wurtzite- Derived Wide Band Gap Oxide

被引：25

作者：

Omata, Takahisa ^{[1
]}

Kita, Masao ^{[2
]}

Nose, Katsuhiro ^{[1
]}

Tachibana, Kosuke ^{[1
]}

Otsuka-Yao-Matsuo, Shinya ^{[1
]}

机构：

[1] Osaka Univ, Div Mat & Mfg Sci, Grad Sch Engn, Suita, Osaka 5650871, Japan

[2] Toyama Natl Coll Technol, Dept Ecomat Engn, Toyama 9398630, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 03期

关键词：

CRYSTAL-STRUCTURE; ZINC-OXIDE; GROWTH; ALLOY;

D O I：

10.1143/JJAP.50.031102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The phase that appeared in the pseudo-binary LiGaO2-ZnO system was investigated by powder X-ray diffraction (XRD), selected area electron diffraction by transmission electron microscopy (TEM-SAD) and Raman spectroscopy, especially focusing on the 0.5(LiGaO2)(1/2) - 0.5ZnO composition. A new quaternary wurtzite-derived Zn2LiGaO4 phase was found in this system. The TEM-SAD indicated that the phase possesses an incommensurately modulated ordering. The optical energy band gap of Zn2LiGaO4 was determined to be similar to 4: 0 eV from its diffuse reflectance and photoluminescence spectra; and it was suggested that the Zn2LiGaO4 was a direct semiconductor. (C) 2011 The Japan Society of Applied Physics

引用

页数：4