Negative bias temperature instability: Recoverable versus permanent degradation

被引:29
作者
Grasser, Tibor [1 ]
Kaczer, Ben [2 ]
机构
[1] Vienna Univ Technol, Inst Microelect, Christian Doppler Lab Heterogene Katalyse, TCAD, Gusshausstr 27-29, A-1040 Vienna, Austria
[2] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium
来源
ESSDERC 2007: PROCEEDINGS OF THE 37TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2007年
关键词
D O I
10.1109/ESSDERC.2007.4430895
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The analysis of negative bias temperature instability (NBTI) conventionally focuses on the stress phase where features like the power-law exponent, the temperature-dependence, and saturation of the observed threshold voltage shift have been extensively studied. As soon as the stress is removed, however, relaxation sets in, restoring at least some of the degradation. Although some studies on the relaxation phase have been presented, few authors have acknowledged the importance of the relaxation phase as a means of deepening our understanding of NBTI. We present a detailed analysis of NBTI relaxation, show that even at lower stressing voltages a permanent/slowly relaxing component is present, and demonstrate how this initially less dominant component might eventually determine the device lifetime.
引用
收藏
页码:127 / +
页数:2
相关论文
共 14 条
[1]  
ALAM MA, 2006, MICROELECTR RELIAB
[2]  
[Anonymous], 2005, P IRPS
[3]  
[Anonymous], 2005, PROC IEEE INT ELECT
[4]   On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's [J].
Denais, M ;
Bravaix, A ;
Huard, V ;
Parthasarathy, C ;
Ribes, G ;
Perrier, F ;
Rey-Tauriac, Y ;
Revil, N .
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :109-112
[5]  
DENAIS M, 2006, P IRPS, P735
[6]  
GRASSNER T, 2007, P IRPS, P1
[7]   NBTI degradation: From physical mechanisms to modelling [J].
Huard, V ;
Denais, M ;
Parthasarathy, C .
MICROELECTRONICS RELIABILITY, 2006, 46 (01) :1-23
[8]  
KACZER B, 2005, P INFOS, P1
[9]   Negative bias temperature instability in CMOS devices [J].
Mahapatra, S ;
Alam, AA ;
Kumar, PB ;
Dalei, TR ;
Varghese, D ;
Saha, D .
MICROELECTRONIC ENGINEERING, 2005, 80 :114-121
[10]  
REISINGER H, 2006, P IRPS, P448