On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's

被引：218

作者：

Denais, M ^{[1
]}

Bravaix, A ^{[1
]}

Huard, V ^{[1
]}

Parthasarathy, C ^{[1
]}

Ribes, G ^{[1
]}

Perrier, F ^{[1
]}

Rey-Tauriac, Y ^{[1
]}

Revil, N ^{[1
]}

机构：

[1] STMicroelect, F-38926 Crolles, France

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419080

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a new methodology to characterize the Negative Bias Temperature Instability (NBTI) degradation without inherent recovery. The extracted parameters are the linear drain current, the threshold voltage and the transconductance. We compare the new and the usual methodologies and show a logarithmic time dependence of both the degradation and the recovery. The hole trapping (detrapping) is directly correlated to the V-T degradation (recovery), and plays the main role in the NBTI in ultra-thin gate-oxide PMOSFET's.

引用

页码：109 / 112

页数：4

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