Dynamic recovery of negative bias temperature instability in p-type metal-oxide-semiconductor field-effect transistors

被引：142

作者：

Ershov, M ^{[1
]}

Saxena, S ^{[1
]}

Karbasi, H ^{[1
]}

Winters, S ^{[1
]}

Minehane, S ^{[1
]}

Babcock, J ^{[1
]}

Lindley, R ^{[1
]}

Clifton, P ^{[1
]}

Redford, M ^{[1
]}

Shibkov, A ^{[1
]}

机构：

[1] PDF Solut, San Jose, CA 95110 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 08期

关键词：

CMOS integrated circuits - Degradation - Relaxation processes;

D O I：

10.1063/1.1604480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An unexpected physical phenomenon-dynamic recovery of negative bias temperature instability (NBTI)-is reported. NBTI degradation in p-type metal-oxide-semiconductor field-effect transistors is significantly (by similar to40%) reduced after stress interruption. NBTI recovery dynamics includes a very fast transient (seconds time scale) followed by a slow (tens of minutes) transient, which tends to saturate. Under subsequent application of stress bias, the degradation quickly returns to its previous state. Thus, apparent NBTI degradation includes permanent and reversible components. NBTI degradation and device lifetime depend strongly on the measurement procedure and equipment due to these relaxation phenomena, which should be taken into account in analyzing the results of NBTI measurements. (C) 2003 American Institute of Physics.

引用

页码：1647 / 1649

页数：3

共 12 条

[1] MECHANISM OF NEGATIVE-BIAS-TEMPERATURE INSTABILITY [J].