Characterization of ultrathin plasma nitrided gate dielectrics in pMOSFET for 0.18μm technology and beyond

被引：4

作者：

Tan, SS ^{[1
]}

Ang, CH ^{[1
]}

Lek, CM ^{[1
]}

Chen, TP ^{[1
]}

Cho, BJ ^{[1
]}

See, A ^{[1
]}

Chan, L ^{[1
]}

机构：

[1] Nanyang Technol Univ, Dept Elect & Elect Engn, Singapore 639798, Singapore

来源：

PROCEEDINGS OF THE 9TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2002年

关键词：

D O I：

10.1109/IPFA.2002.1025674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impacts of nitrogen plasma nitridation on the interfacial quality of ultrathin oxide (1.8nm and 2.6nm) and negative bias temperature instability (NBTI) have been investigated. It is found that the plasma-nitridation can effectively suppresses nitrogen-induced and boron-induced hole's mobility degradation than that of thermal nitridation. Therefore, higher amount of nitrogen can be incorporated into the plasma-nitrided oxide to suppress boron penetration without compromising the oxide interfacial quality. Furthermore, plasma-nitrided oxides have higher resistance to NBTI and longer NBTI-lifetime than that of thermal-nitrided oxides.

引用

页码：254 / 258

页数：5

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