NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-μm gate CMOS generation

被引:205
作者
Kimizuka, N [1 ]
Yamaguchi, K [1 ]
Imai, K [1 ]
Iizuka, T [1 ]
Liu, CT [1 ]
Keller, RC [1 ]
Horiuchi, T [1 ]
机构
[1] NEC Corp Ltd, ULSI Device Dev Lab, Kanagawa 2291198, Japan
来源
2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2000年
关键词
D O I
10.1109/VLSIT.2000.852782
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
We investigated the degradation of device reliability due to Negative Bias Temperature Instability (NBTI) of PMOSFET with ultrathin gate oxide. It was experimentally demonstrated that the chemical reactions at the gate oxide/substrate interface and/or diffusion of hydrogen related species are the major cause of the NBTI. We also found that nitridation of gate oxide enhances NBTI. In order to suppress the NBTI, the density of hydrogen terminated silicon bond at the interface needs to be minimized. Thus, the concentration of nitrogen in thin gate oxide has to be optimized in terms of the reliability reduction due to NBTI.
引用
收藏
页码:92 / 93
页数:2
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