Giant isotope effect in hot electron degradation of metal oxide silicon devices

被引:125
作者
Hess, K [1 ]
Kizilyalli, IC
Lyding, JW
机构
[1] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[3] Lucent Bell Labs, Orlando, FL 32819 USA
关键词
charge carrier processes; CMOS integrated circuits; deuterium materials/devices; hydrogen materials/devices; MOS devices; semiconductor-insulator interfaces; transistors;
D O I
10.1109/16.658674
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A giant isotope effect of hot electron degradation was found by annealing and passivating integrated circuits of recent complementary metal oxide silicon (CMOS) technology with deuterium instead of hydrogen. In this paper, we summarize our experience and present new results of secondary ion mass spectroscopy that correlate deuterium accumulation with reduced hot electron degradation. We also present a first account of the physical theory of this effect with a view on engineering application and point toward rules of current and voltage scaling as obtained from this theory.
引用
收藏
页码:406 / 416
页数:11
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