Radical nitridation in multi-oxide process for 100nm generation CMOS technology

被引：5

作者：

Yasuda, Y ^{[1
]}

Kimizuka, N ^{[1
]}

Watanabe, K ^{[1
]}

Tatsumi, T ^{[1
]}

Ono, A ^{[1
]}

Fukasaku, K ^{[1
]}

Imai, K ^{[1
]}

Nakamura, N ^{[1
]}

机构：

[1] ULSI Device Dev Div, Sagamihara, Kanagawa 2291198, Japan

来源：

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2001年

关键词：

D O I：

10.1109/VLSIT.2001.934958

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose a new multi-oxide technology, which drastically improves the ratio of the drive current to the gate leakage current for both high-performance (HP) Tr. and low-power (LP) Tr. on the same die. The key technology is radical nitridation[1,2] followed by multi-oxide formation. In addition, it is easier to integrate with conventional CMOS processes, compared with high-k dielectrics. Only one additional step reduces equivalent oxide thickness (EOT) of LP Tr. by 0.3 nm, thereby improving the drive current (Ion). It also suppresses the gate leakage current (Ig) for HP Tr. by two orders of magnitude without an increase of EOT. Each oxide thickness of the multi-oxide is scalable to support various system on a chip (SoC) applications.

引用

页码：83 / 84

页数：2

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