Gas-tight alumina films on nanoporous substrates through oxidation of sputtered metal films

被引：15

作者：

Park, YI

Cha, SW

Saito, Y

Prinz, FB

机构：

[1] Kumoh Natl Inst Technol, Sch Mat & Syst Eng, Kyungbuk 730701, South Korea

[2] Stanford Univ, Rapid Prototyping Lab, Dept Mech Engn, Stanford, CA 94305 USA

来源：

THIN SOLID FILMS | 2005年 / 476卷 / 01期

关键词：

aluminum oxide; oxidation; solid electrolyte interface; physical vapor deposition;

D O I：

10.1016/j.tsf.2004.09.059

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The fabrication of ultrathin oxide films without gas leakage was investigated for the application to low-temperature solid oxide fuel cells (SOFCs). Aluminum thin films we're deposited onto two types of anodic nanoporous alumina substrates with pore diameter of 20 and 200 nm, respectively, using dc-magnetron sputter at room temperature. By subsequent oxidation at temperatures over 500 degrees C, the metal films were successfully transformed into oxide films with thickness of about 35 and 410 nm. Volume expansion induced from oxidation of metal resulted in dense thin films that are free from hydrogen permeation. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：168 / 173

页数：6

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