Improvement of the electrical properties of heteroepitaxial yttria-stabilized zirconia (YSZ) films on Si prepared by reactive sputtering

被引：15

作者：

Horita, S ^{[1
]}

Nakajima, H ^{[1
]}

Kuniya, T ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Ishikawa 9231292, Japan

来源：

VACUUM | 2000年 / 59卷 / 2-3期

关键词：

D O I：

10.1016/S0042-207X(00)00292-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A heteroepitaxial yttria-stabilized zirconia (YSZ) him was prepared on an Si substrate by de magnetron sputtering with Ar + O-2 gas, where the metallic Zr + Y film was deposited on the weakly oxidized Si substrate prior to the YSZ film deposition. It was found from the XPS measurement that most of the weakly oxidized Si layer was reduced by depositing the Zr + Y film at a substrate temperature of 800 degreesC and that zirconia and yttria were formed. An unfavorable kink of the C-V characteristics of the 10-nm-thick YSZ/Si substrate structure was almost extinguished by annealing at 900 degreesC for 10 min in the N-2 atmosphere. Also, the hysteresis loop width of the C-V curve was reduced by this annealing process. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：390 / 396

页数：7

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