Material properties of heteroepitaxial Ir and Pb(Zr,Til-x)O3 films on (100)(ZrO2)1-x(Y2O3)x/(100)Si structure prepared by sputtering

We investigated the crystalline quality and electrical properties of heteroepitaxial Ir and Pb(ZrxTi1-x)O-3 films deposited by sputtering on an epitaxial (100)(ZrO2)(1-x), (Y2O3)(x) film/(100)Si substrate structure. The Ir(100) and Ir(lll) orientations were enhanced and reduced, respectively, by decreasing the deposition rate. The phi scan pattern of X-ray diffraction showed that the (100) oriented film was the heteroepitaxial film on the epitaxial (100)YSZ film with a cube on cube relationship. On this epitaxial ( 100)Ir film, a heteroepitaxial (001)PZT film was obtained by reactive sputtering. The P-E hysteresis loop of the 200 nm-thick epitaxial PZT film showed a well-saturated square shape at the ac amplitude of 3 V, and the remanent polarization 2P(t) and the coercive field 2E(c) were 83 mu C/cm(2) and 131 kV/cm, respectively. The leakage current was about I x 10(-7) A/cm(2) at +/-5 V.