Interface control of Pb(ZrxTi1-x)O-3 thin film on silicon substrate with heteroepitaxial YSZ buffer layer

被引：24

作者：

Horita, S

Naruse, T

Watanabe, M

Masuda, A

Kawada, T

Abe, Y

机构：

[1] School of Materials Science, Japan Adv. Inst. Sci. and Technol., Ishikawa 923-12, Hokuriku, Tatsunokuchi

来源：

APPLIED SURFACE SCIENCE | 1997年 / 117卷

关键词：

PZT film; YSZ buffer layer; Si substrate; heteroepitaxy; ferroelectricity;

D O I：

10.1016/S0169-4332(97)80119-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The interface between a PZT film and an Si(100) substrate was controlled by using a heteroepitaxial YSZ buffer layer. A 10 nm thick YSZ buffer layer was able to prevent the PZT film from reacting with the Si substrate at the substrate temperature of 650 degrees C and produced the highly c-axis-oriented perovskite PZT film. The polarization-voltage hysteresis measurement showed that the PZT/YSZ/Si structure had ferroelectric properties although the leakage current was relatively large. From the results of the capacitance-voltage and the current-voltage characteristics, it was speculated that this structure had the crystalline defects or carrier traps which generated large absorption current with short relaxation time constants.

引用

页码：429 / 433

页数：5

共 13 条

[1] NONLINEAR ELECTRICAL-PROPERTIES OF LEAD-LANTHANUM-TITANATE THIN-FILMS DEPOSITED BY MULTI-ION-BEAM REACTIVE SPUTTERING [J].

FOX, GR ;

KRUPANIDHI, SB .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) :1949-1959

[2] EFFECT OF ZR/TI RATIO ON CRYSTAL-STRUCTURE OF THIN LEAD-ZIRCONATE-TITANATE FILMS PREPARED BY REACTIVE SPUTTERING [J].

FUJISAWA, A ;

FURIHATA, M ;

MINEMURA, I ;

ONUMA, Y ;

FUKAMI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B) :4048-4051

[3] PREPARATION OF PB(ZR, TI)O-3 THIN-FILMS BY MULTITARGET SPUTTERING [J].

HASE, T ;

HIRATA, K ;

AMANUMA, K ;

HOSOKAWA, N ;

MIYASAKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5244-5248

[4] Crystal and electrical characterizations of oriented yttria-stabilized zirconia buffer layer for the metal/ferroelectric/insulator/semiconductor field-effect transistor [J].

Hirai, T ;

Teramoto, K ;

Nagashima, K ;

Koike, H ;

Matsuno, S ;

Tanimoto, S ;

Tarui, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (07) :4016-4020

[5] CHARACTERIZATION OF METAL FERROELECTRIC INSULATOR SEMICONDUCTOR STRUCTURE WITH CEO2 BUFFER LAYER [J].

HIRAI, T ;

TERAMOTO, K ;

NAGASHIMA, K ;

KOIKE, H ;

TARUI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (8A) :4163-4166

[6] HETEROEPITAXIAL GROWTH OF YTTRIA-STABILIZED ZIRCONIA FILM ON SILICON BY REACTIVE SPUTTERING [J].

HORITA, S ;

MURAKAWA, M ;

FUJIYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (4A) :1942-1946

[7] EPITAXIAL-GROWTH OF YTTRIA-STABILIZED ZIRCONIA FILMS ON SILICON BY ULTRAHIGH-VACUUM ION-BEAM SPUTTER DEPOSITION [J].

LEGAGNEUX, P ;

GARRY, G ;

DIEUMEGARD, D ;

SCHWEBEL, C ;

PELLET, C ;

GAUTHERIN, G ;

SIEJKA, J .

APPLIED PHYSICS LETTERS, 1988, 53 (16) :1506-1508

[8] HIGHLY ORIENTED PB(ZR,TI)O-3 THIN-FILMS PREPARED BY PULSED-LASER ABLATION ON GAAS AND SI SUBSTRATES WITH MGO BUFFER LAYER [J].

MASUDA, A ;

YAMANAKA, Y ;

TAZOE, M ;

YONEZAWA, Y ;

MORIMOTO, A ;

SHIMIZU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B) :5154-5157

[9]

MIHARA T, 1995, JPN J APPL PHYS 1, V34, P5664, DOI 10.1143/JJAP.34.5664

[10]

Moll J., 1963, IEEE Trans. Electron Devices, V10, P338, DOI DOI 10.1109/T-ED.1963.15245

← 1 2 →