HIGHLY ORIENTED PB(ZR,TI)O-3 THIN-FILMS PREPARED BY PULSED-LASER ABLATION ON GAAS AND SI SUBSTRATES WITH MGO BUFFER LAYER

被引：50

作者：

MASUDA, A ^{[1
]}

YAMANAKA, Y ^{[1
]}

TAZOE, M ^{[1
]}

YONEZAWA, Y ^{[1
]}

MORIMOTO, A ^{[1
]}

SHIMIZU, T ^{[1
]}

机构：

[1] IND RES INST ISHIKAWA PREFECTURE,KANAZAWA,ISHIKAWA 92002,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9B期

关键词：

PB(ZR; TI)O-3 (PZT) THIN FILMS; MGO BUFFER LAYER; GAAS SUBSTRATE; SI SUBSTRATE; PULSED LASER ABLATION (PLA); 100] ORIENTATION; DEPTH PROFILE; FERROELECTRIC HYSTERESIS LOOP; METAL-FERROELECTRIC-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MFS-FET);

D O I：

10.1143/JJAP.34.5154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly [100]-oriented Pb(Zr, Ti)O-3 (PZT) films were prepared on (100) GaAs and (100) Si substrates with MgO buffer layer by pulsed laser ablation (PLA), The depth profile of the constituent elements observed by X-ray photoelectron spectroscopy (XPS) shows that there are no remarkable interdiffusion and/or no formation of an alloying layer at both interfaces between PZT and MgO and between MgO and GaAs substrate. The [100]-oriented perovskite PZT films which exhibit the ferroelectric hysteresis loop were obtained on (100) Si substrate with MgO buffer laver with the thickness of only 50 Angstrom, showing that this technique promises the realization of metal-ferroelectric-semiconductor field-effect transistors (MFS-FETs).

引用

页码：5154 / 5157

页数：4

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