HETEROEPITAXIAL GROWTH OF CEO2 FILM ON GAAS(001) SUBSTRATE BY LASER MOLECULAR-BEAM EPITAXY

被引:10
作者
NAGATA, H [1 ]
YOSHIMOTO, M [1 ]
KOINUMA, H [1 ]
机构
[1] TOKYO INST TECHNOL,ENGN MAT RES LAB,NAGATSUTA CHO 4259,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN
关键词
D O I
10.1016/0022-0248(92)90075-T
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A CeO2(001) epitaxial film was grown on a GaAs(001) substrate by laser molecular beam epitaxy (laser MBE). Unexpectedly, a CeO2 film grew along the (110) orientation on a Si(001) substrate. A weak interface reaction on the GaAs(001) was considered to be the reason for the hetero-epitaxial growth of CeO2(001).
引用
收藏
页码:299 / 303
页数:5
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