CHARACTERIZATION OF EPITAXIAL YTTRIA-STABILIZED ZIRCONIA/SI INTERFACE BY ION-BEAM CHANNELING

被引：8

作者：

FUKUMOTO, H

YAMAMOTO, M

OSAKA, Y

机构：

[1] Department of Electrical Engineering, Hiroshima University

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.347465

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Yttria-stabilized zirconia (YSZ) films which have high crystalline quality and no dislocation near the YSZ/Si interface, have been epitaxially grown on Si(100) in spite of the relatively large lattice mismatch between YSZ and Si. The formation of the SiO2 layer at the YSZ/Si interface during the YSZ deposition takes an important part as a buffer layer in the epitaxial growth of YSZ films on Si.

引用

收藏

页码：8130 / 8132

页数：3

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