INTERFACIAL STRUCTURE IN HETEROEPITAXIAL SILICON ON SAPPHIRE

被引：10

作者：

AINDOW, M ^{[1
]}

机构：

[1] CASE WESTERN RESERVE UNIV,DEPT MAT SCI & ENGN,CLEVELAND,OH 44106

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1990年 / 73卷 / 05期

关键词：

dislocations; interfaces; models; sapphire; silicon;

D O I：

10.1111/j.1151-2916.1990.tb05169.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Several distinct structural models have been proposed for the interface in heteroepitaxial silicon on sapphire based on transmission electron microscopy observations. These models fall conveniently into three groups according to the mechanism whereby misfit is accommodated. In coherent models misfit is accommodated by twins, in semicoherent models by arrays of misfit dislocations, and in incoherent models by mixed‐mode aluminosilicate bonding at the interface. It is shown that particular specimen geometries or imaging modes are common to each group. Possible explanations for the controversy are proposed in terms of inherent ambiguities in the interpretation of electron microscope images of heterophase boundaries. Copyright © 1990, Wiley Blackwell. All rights reserved

引用

页码：1136 / 1143

页数：8

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