ELECTRON-MICROSCOPE STUDY OF EPITAXIAL SILICON FILMS ON SAPPHIRE AND DIAMOND SUBSTRATES

被引：10

作者：

CULLIS, AG

BOOKER, GR

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] UNIV OXFORD,DEPT MET,OXFORD,ENGLAND

来源：

THIN SOLID FILMS | 1976年 / 31卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(76)90354-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：53 / 67

页数：15

共 38 条

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[2]

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[6] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J].

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[7] SILICON-ON-SAPPHIRE EPITAXY BY VACUUM SUBLIMATION - LEED-AUGER STUDIES AND ELECTRONIC PROPERTIES OF FILMS [J].

CHANG, CC .

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[8]

Chu T. L., 1965, AFCRL65574 WEST RES

[9] INVESTIGATIONS OF DISLOCATION STRAIN FIELDS USING WEAK BEAMS [J].

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RAY, ILF ;

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[10]

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