Noise determination in silicon micro strips

被引：4

作者：

Dubbs, T

Kashigin, S

Kratzer, M

Kroeger, W

Pulliam, T

Sadrozinski, HFW

Spencer, E

Wichmann, R

Wilder, M

Bialas, W

Dabrowski, W

Ohsugi, T

机构：

[1] KRAKOW FTNT,KRAKOW,POLAND

[2] NATL LAB HIGH ENERGY PHYS,KEK,TSUKUBA,IBARAKI 305,JAPAN

[3] HIROSHIMA UNIV,HIROSHIMA,JAPAN

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 03期

关键词：

D O I：

10.1109/23.506648

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the study of amplifier noise on silicon micro strip detectors. We have used a fast, low noise amplifier-comparator VLSI chip with 22ns shaping time developed for the LHC to determine the noise at the pre-amp as a function of strip length and strip geometry, i.e., interstrip capacitance and ohmic strip resistance. In addition, we have tested the noise in irradiated detectors. We have compared the results with simulations using SPICE.

引用

页码：1119 / 1122

页数：4

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