Hall-Effect Measurements Probing the Degree of Charge-Carrier Delocalization in Solution-Processed Crystalline Molecular Semiconductors

被引:105
作者
Chang, Jui-Fen [1 ]
Sakanoue, Tomo [1 ]
Olivier, Yoann [2 ]
Uemura, Takafumi [3 ]
Dufourg-Madec, Marie-Beatrice [4 ]
Yeates, Stephen G. [4 ]
Cornil, Jerome [2 ]
Takeya, Jun [3 ]
Troisi, Alessandro [5 ,6 ]
Sirringhaus, Henning [1 ]
机构
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 OHE, England
[2] Univ Mons, Lab Chem Novel Mat, B-7000 Mons, Belgium
[3] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
[4] Univ Manchester, Organ Mat Innovat Ctr, Sch Chem, Manchester M13 9PL, Lancs, England
[5] Univ Warwick, Dept Chem, Coventry CV4 7AL, W Midlands, England
[6] Univ Warwick, Ctr Comp Sci, Coventry CV4 7AL, W Midlands, England
基金
英国工程与自然科学研究理事会;
关键词
DEPENDENCE; PENTACENE; MOBILITY;
D O I
10.1103/PhysRevLett.107.066601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Intramolecular structure and intermolecular packing in crystalline molecular semiconductors should have profound effects on the charge-carrier wave function, but simple drift mobility measurements are not very sensitive to this. Here we show that differences in the Hall resistance of two soluble pentacene derivatives can be explained with different degrees of carrier delocalization being limited by thermal lattice fluctuations. A combination of Hall measurements, optical spectroscopy, and theoretical simulations provides a powerful probe of structure-property relationships at a molecular level.
引用
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页数:4
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