Theory and application of the material work function for chemical sensors based on the field effect principle

被引：64

作者：

Bergveld, P ^{[1
]}

Hendrikse, J ^{[1
]}

Olthuis, W ^{[1
]}

机构：

[1] Univ Twente, MESA Res Inst, NL-7500 AE Enschede, Netherlands

来源：

MEASUREMENT SCIENCE AND TECHNOLOGY | 1998年 / 9卷 / 11期

关键词：

redox potential; work function; field effect transistor (FET); environmental monitoring; process control; biomedical measurements;

D O I：

10.1088/0957-0233/9/11/003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper gives first of all the definition of the work function of an electronic as well as an ionic conductor. PET-type gas sensors known from the literature are considered in view of this basic theory and the parameter of the work function which is responsible for the sensing properties is noticed. This appears not always to be possible for the various types of gas sensors, in this case the gas FET, the SGFET and the IGFET. In contrast to this ambiguity, the sensing parameters of the recently developed (MOSFET)-M-E, meant for application in an electrolyte, can clearly be identified. As an example an oxygen sensor based on the developed (MOSFET)-M-E is described.

引用

页码：1801 / 1808

页数：8

共 10 条

[1] DEVELOPMENT OF AN ION-SENSITIVE SOLID-STATE DEVICE FOR NEUROPHYSIOLOGICAL MEASUREMENTS
BERGVELD, P
[J]. IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 1970, BM17 (01) : 70 - &
[2] FIELD-EFFECT TRANSISTOR SENSITIVE TO DIPOLAR MOLECULES
BLACKBURN, GF
LEVY, M
JANATA, J
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (07) : 700 - 701
[3] The EMOSFET as a potentiometric transducer in an oxygen sensor
Hendrikse, J
Olthuis, W
Bergveld, P
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 1998, 47 (1-3) : 1 - 8
[4] HENDRIKSE J, 1998, IN PRESS SENSORS A B
[5] CHEMICAL MODULATION OF THE ELECTRON WORK FUNCTION
JANATA, J
[J]. ANALYTICAL CHEMISTRY, 1991, 63 (22) : 2546 - 2550
[6] SUSPENDED GATE FIELD-EFFECT TRANSISTOR MODIFIED WITH POLYPYRROLE AS ALCOHOL SENSOR
JOSOWICZ, M
JANATA, J
[J]. ANALYTICAL CHEMISTRY, 1986, 58 (03) : 514 - 517
[7] KREY D, 1982, SENSOR ACTUATOR, V3, P169
[8] Properties of insulated gate field-effect transistors with a polyaniline gate electrode
Liess, M
Chinn, D
Petelenz, D
Janata, J
[J]. THIN SOLID FILMS, 1996, 286 (1-2) : 252 - 255
[9] HYDROGEN-SENSITIVE MOS FIELD-EFFECT TRANSISTOR
LUNDSTROEM, I
SHIVARAMAN, S
SVENSSON, C
LUNDKVIST, L
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (02) : 55 - 57
[10] Deposition of the chemically sensitive polymer layer on SGFET gate by laser-induced chemical-vapour polymerization
Papez, V
Brodska, S
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 1997, 40 (2-3) : 143 - 145

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