0.5μm/60GHzfmax implanted base Si bipolar technology

被引：2

作者：

Böck, J ^{[1
]}

Meister, TF ^{[1
]}

Knapp, H ^{[1
]}

Aufinger, K ^{[1
]}

Wurzer, M ^{[1
]}

Gabl, R ^{[1
]}

Pohl, M ^{[1
]}

Boguth, S ^{[1
]}

Franosch, M ^{[1
]}

Treitinger, L ^{[1
]}

机构：

[1] Siemens AG, Corp Technol, Microelect, D-81730 Munich, Germany

来源：

PROCEEDINGS OF THE 1998 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 1998年

关键词：

D O I：

10.1109/BIPOL.1998.741913

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 0.5 mu m silicon bipolar technology for mixed digital/analogue RF applications is described Transit frequencies of 51 GHz are achieved using low-energy implantation and subsequent RTP for base doping. A salicide laver serves to reduce base resistance. This enables maximum oscillation frequencies of 60 GHz and 14 ps ECL gate delay at the expense of only one additional mask in comparison to a silicon bipolar production technology.

引用

页码：160 / 163

页数：4

共 9 条

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[No title captured]

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