Ta-doped anatase TiO2 epitaxial film as transparent conducting oxide

被引：140

作者：

Hitosugi, T

Furubayashi, Y

Ueda, A

Itabashi, K

Inaba, K

Hirose, Y

Kinoda, G

Yamamoto, Y

Shimada, T

Hasegawa, T

机构：

[1] Univ Tokyo, Dept Chem, Tokyo 1130033, Japan

[2] Kanagawa Acad Sci & Technol, Kawasaki, Kanagawa 2130012, Japan

[3] Kogakuin Univ, Dept Environm Chem & Engn, Tokyo 1638677, Japan

[4] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 33-36期

关键词：

pulsed laser deposition; TiO2; transparent conducting oxide; epitaxial; thin film;

D O I：

10.1143/JJAP.44.L1063

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present electrical transport and optical properties of Ta-doped TiO2 epitaxial thin films with varying Ta concentration grown by the pulsed laser deposition method. The Ti0.95Ta0.05O2 film exhibited a resistivity of 2.5 x 10(-4) Omega cm at room temperature, and an internal transmittance of 95% in the visible light region. These values are comparable to those of a Widely used transparent conducting oxide (TCO), indium tin oxide. Furthermore, this new material falls into a new category of TCOs that utilizes d electrons.

引用

页码：L1063 / L1065

页数：3

共 10 条

[1] A transparent metal:: Nb-doped anatase TiO2 -: art. no. 252101 [J].