A TEM study of slip lines in power MOS devices

被引：5

作者：

Rivière-Jérôme, A

Levada, C

Vanderschaeve, G

Percheron-Garçon, I

Forgerit, B

机构：

[1] CNRS, CEMES, F-31055 Toulouse, France

[2] Motorola Inc, F-31023 Toulouse, France

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2000年 / 12卷 / 49期

关键词：

D O I：

10.1088/0953-8984/12/49/329

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The defect structure of 'slip lines' in power MOS devices for automotive applications was investigated by means of selective chemical etching. atomic force microscopy (AFM) and transmission electron microscopy (TEM). Two different types of sample were investigated: (i) wafers taken after the epitaxy step and (ii) wafers that went through the whole process, thus containing operational devices. It is shown that a slip band contains an inhomogeneous density of dislocations, which probably interact with small defect clusters during their motion.

引用

页码：10279 / 10286

页数：8

共 9 条

[1] SLIP IN SILICON EPITAXY [J].