Strain-engineered self-assembled semiconductor quantum dot lattices

被引：131

作者：

Lee, H ^{[1
]}

Johnson, JA ^{[1
]}

He, MY ^{[1
]}

Speck, JS ^{[1
]}

Petroff, PM ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 01期

关键词：

D O I：

10.1063/1.1336554

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a self-assembling method for growing semiconductor quantum dots into ordered lattices. The quantum dot nucleation and positioning into lattices was achieved using a periodic subsurface stressor lattice. Three different two-dimensional (2D) square lattices are demonstrated. The unit cell dimensions, orientation, and the number of quantum dots in the basis are tunable. We find that the 2D lattice can be replicated at periodic intervals along the growth direction to form a three-dimensional (3D) lattice of quantum dots. (C) 2001 American Institute of Physics.

引用

页码：105 / 107

页数：3