Influence of quantum confinement effects on single electron and single hole transistors

被引：11

作者：

Ishikuro, H ^{[1
]}

Hiramoto, T ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746293

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Influences of quantum confinement effects on the device characteristics of single electron and single hole transistors are studied using Si narrow channel MOSFETs with both p(+) and n(+) source/drain contacts. Numerical calculations of the energy spectrum in silicon quantum dots are also carried out to support the experimental results. The obtained results indicate the difficulty in predicting the peak positions of the Coulomb blockade oscillations due to the quantum confinement effects in nanoscale devices. For the application of SETs, anew method to adjust the peak position by injecting charges into silicon nano-crystals or traps is proposed and demonstrated.

引用

页码：119 / 122

页数：4

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