Doped organic semiconductors: Physics and application in light emitting diodes

被引:355
作者
Pfeiffer, M [1 ]
Leo, K
Zhou, X
Huang, JS
Hofmann, M
Werner, A
Blochwitz-Nimoth, J
机构
[1] Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany
[2] Novaled GmbH, D-01069 Dresden, Germany
关键词
OLED; doping; conductivity; charge injection; low voltage; high efficiency; HOLE TRANSPORT MATERIAL; ELECTROLUMINESCENT DEVICES; THIN-FILMS; DEGRADATION MECHANISM; ELECTRICAL-PROPERTIES; CHARGE-TRANSPORT; INJECTING LAYER; PHTHALOCYANINE; VOLTAGE; COSUBLIMATION;
D O I
10.1016/j.orgel.2003.08.004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we discuss recent experiments which prove that evaporated organic films can be efficiently doped by co-evaporation with organic dopant molecules. Key advantages for devices are the high conductivity and the formation of ohmic contacts despite large energetic barriers. For p-type doping, efficient doping is possible for a variety of polycrystalline and amorphous materials. Despite the differences in the microscopic behavior, all basic effects known from doped inorganic semiconductors are found in organics as well. However, efficient n-type doping with stable molecular dopants is still a challenge. Organic light emitting diodes (OLED) with conductivity doped transport layers show significantly improved properties: For instance, we have achieved a brightness of 100 cd/m(2) already at a voltage of 2.55 V, well below previous results for undoped devices. The advantages of doping are even more pronounced for top-emitting, inverted OLED structures: Due to the ohmic contacts nearly independent of the contact properties, it is possible to realize inverted top-emitting devices with parameters comparable to standard devices. Our doping technology is thus a significant advantage for active-matrix OLED displays and other displays on opaque substrate. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:89 / 103
页数:15
相关论文
共 51 条
[51]   Very-low-operating-voltage organic light-emitting diodes using a p-doped amorphous hole injection layer [J].
Zhou, X ;
Pfeiffer, M ;
Blochwitz, J ;
Werner, A ;
Nollau, A ;
Fritz, T ;
Leo, K .
APPLIED PHYSICS LETTERS, 2001, 78 (04) :410-412