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The influence of LiF thickness on the built-in potential of blue polymer light-emitting diodes with LiF/Al cathodes
被引:15
作者:
Brown, TM
Millard, IS
Lacey, DJ
Burroughes, JH
Friend, RH
Cacialli, F
机构:
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] CDT Ltd, Cambridge CB3 0HJ, England
关键词:
light-emitting diodes;
LiF;
cathode;
electroabsorption;
barrier height;
built-in potential;
D O I:
10.1016/S0379-6779(01)00412-X
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We use electroabsorption to investigate the built-in potential of polymer light-emitting diodes with LiF/Al cathodes, as a function of the LiF thickness d. We find that the built-in potential increases with d, reaching a plateau at d less than or equal to 7 nm. The results, obtained on finished devices, imply a correspondent lowering of the cathode work function, which correlates with the device luminance and efficiency. Consequently, we demonstrate that the improvement in device performance, brought about by the thin LiF layers, is predominantly attributable to the reduction of the barrier height to electron injection. (C) 2001 Elsevier Science B.V. All rights reserved.
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页码:15 / 17
页数:3
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