Transport properties of graphene with one-dimensional charge defects

被引：31

作者：

Ferreira, Aires ^{[1
,2
]}

Xu, Xiangfan ^{[3
]}

Tan, Chang-Lin ^{[4
,5
]}

Bae, Su-Kang ^{[4
,5
]}

Peres, N. M. R. ^{[1
,2
]}

Hong, Byung-Hee ^{[4
,5
,6
]}

Oezyilmaz, Barbaros ^{[3
,8
]}

Castro Neto, A. H. ^{[7
]}

机构：

[1] Univ Minho, Dept Phys, P-4710057 Braga, Portugal

[2] Univ Minho, Ctr Phys, P-4710057 Braga, Portugal

[3] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[4] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea

[5] Sungkyunkwan Univ, Ctr Human Interface Nano Technol HINT, Suwon 440746, South Korea

[6] Sungkyunkwan Univ, Dept Chem, Suwon 440746, South Korea

[7] Boston Univ, Dept Phys, Boston, MA 02215 USA

[8] Natl Univ Singapore, Singapore 117576, Singapore

来源：

EPL | 2011年 / 94卷 / 02期

关键词：

FILMS;

D O I：

10.1209/0295-5075/94/28003

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We study the effect of extended charge defects in electronic transport properties of graphene. Extended defects are ubiquitous in chemically and epitaxially grown graphene samples due to internal strains associated with the lattice mismatch. We show that at low energies these defects interact quite strongly with the 2D Dirac fermions and have an important effect in the DC-conductivity of these materials. Copyright (C) EPLA, 2011

引用

页数：6

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