Functionalized anthradithiophenes for organic field-effect transistors

被引：106

作者：

Chen, Ming-Chou ^{[1
,3
]}

Kim, Choongik ^{[2
]}

Chen, Sheng-Yu ^{[1
,3
]}

Chiang, Yen-Ju ^{[1
,3
]}

Chung, Ming-Che ^{[1
,3
]}

Facchetti, Antonio ^{[2
]}

Marks, Tobin J. ^{[2
]}

机构：

[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

[3] Natl Cent Univ, Dept Chem, Chungli 32054, Taiwan

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2008年 / 18卷 / 09期

关键词：

D O I：

10.1039/b715746k

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Two new semiconductors for organic thin-film transistors (OTFTs), diperfluorophenyl anthradithiophene (DFPADT) and dimethyl anthradithiophene (DMADT), have been synthesized and characterized. The first material exhibits ambipolar transport in OTFT devices with field-effect mobilities (mu) of 6 x 10(-4) cm(2) V-1 s(-1) and 0.05 cm(2) V-1 s(-1) for electrons and holes, respectively. Therefore, diperfluorophenyl substitution was found to be effective to induce n-type transport. Dimethyl-substituted anthradithiophene ( DMADT) was also synthesized for comparison and exhibited exclusively hole transport with carrier mobility of similar to 0.1 cm(2) V-1 s(-1). Within this semiconductor family, OTFT carrier mobility values are strongly dependent on the semiconductor film growth conditions, substrate deposition temperatures, and gate dielectric surface treatment.

引用

页码：1029 / 1036

页数：8

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