Photo-thermal excitation gas-source MBE growth of super-doped Si:Mn for spin-photonics applications

被引:13
作者
Nakayama, H
Ohta, H
Kulatov, E
机构
[1] Osaka City Univ, Fac Engn, Dept Appl Phys, Sumiyoshi Ku, Osaka 5588585, Japan
[2] Kobe Univ, Fac Sci, Dept Phys, Nada Ku, Kobe, Hyogo 6578501, Japan
[3] Russian Acad Sci, Inst Gen Phys, Moscow 117942, Russia
关键词
silicon; manganese; Auger electron spectroscopy; MBE;
D O I
10.1016/S0040-6090(01)01276-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Crystalline Si thin films doped with transition metal elements far beyond the solid solubility are named here as 'super-doped Si:TM' (TM = transition metals). Super-doped Si:Mn thin films with doping levels of more than 10% have been grown by using a photo-thermal excitation gas-source molecular beam epitaxy (GSMBE) technique. The GSMBE apparatus used here was equipped with a 'hot W-filament cell', and hence it is called photo-thermal excitation GSMBE. The hot W-filament cell decomposed quite effectively the source of SiCl2H2 molecules and enabled the growth of polycrystalline super-doped Si:Mn solid-solution films at substrate temperatures as low as 300 degreesC. Auger electron spectroscopy has revealed the characteristic valence electron spectra arising from the valence-electron hybridization between 3d electrons of Mn and s-p electrons of Si. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:230 / 234
页数:5
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