Subtracted Auger electron spectra of heavily doped transition-metal impurities in Si

被引:6
作者
Abe, S
Nakayama, H
Nishino, T
Ohta, H
Iida, S
机构
[1] Kobe Univ, Venture Business Lab, Nada Ku, Kobe, Hyogo 6578501, Japan
[2] Kobe Univ, Grad Sch Sci & Technol, Nada Ku, Kobe, Hyogo 6578501, Japan
[3] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
[4] Kobe Univ, Fac Engn, Dept Phys, Nada Ku, Kobe, Hyogo 6578501, Japan
[5] Osaka Sangyo Univ, Fac Engn, Dept Elect & Elect Engn, Osaka 5740013, Japan
关键词
solid solution; valence electron state; subtracted Auger spectra;
D O I
10.1016/S0022-0248(99)00667-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A spectral subtraction method of Auger valence spectra has been applied in order to analyze the changes of the valence electron states in Si: Fe and Si : Co solid solution layers. In the subtracted Auger spectra of Si : Fe solid solution layers for less than about 4%, the peak position shifted to the lower-energy region. Si 3s, 3p bands and Fe 3d one appeared to be modified by local Fe-Si chemical bonds in the Si:Fe solid solution layers for a few percent. The subtracted-spectral changes of Si : Co solid solution for 8.8% and 7.5% were associated with the drastic change of the interactions between Si and Co impurities. The Si:Co solid solution layers for less than about 5% have almost no significant interactions between Si and Co impurities. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:137 / 142
页数:6
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