Light responsive polymer field-effect transistor

被引：198

作者：

Narayan, KS ^{[1
]}

Kumar, N ^{[1
]}

机构：

[1] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 12期

关键词：

D O I：

10.1063/1.1404131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the effect of light incident on a polymer-based field-effect transistor and demonstrate the utility of light as an additional controlling parameter of the transistor state. The transistor exhibits large photosensitivity indicated by the sizable changes in the drain-source current at low levels of light. The response here is considerably higher than that from existing organic/polymeric planar, two-terminal photodetectors due to an additional process contributing to the enhancement. The light-responsive polymer transistor opens up a device-architecture concept for polymer-based electronics. (C) 2001 American Institute of Physics.

引用

页码：1891 / 1893

页数：3

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