ALL-ORGANIC THIN-FILM TRANSISTORS MADE OF ALPHA-SEXITHIENYL SEMICONDUCTING AND VARIOUS POLYMERIC INSULATING LAYERS

被引:164
作者
PENG, XZ [1 ]
HOROWITZ, G [1 ]
FICHOU, D [1 ]
GARNIER, F [1 ]
机构
[1] CNRS,MAT MOLEC LAB,F-94320 THIAIS,FRANCE
关键词
D O I
10.1063/1.103994
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin-film transistors (TFTs) were fabricated with a variety of organic polymer insulators topped with a vacuum evaporated organic semiconductor, α-sexithienyl (α6T). No field-enhanced source-drain current was obtained with polystyrene (PSt) and polymethylmethacrylate (PMMA). The field-enhanced current is weak with polyvinyl chloride (PVC), but much stronger with polyvinyl alcohol (PVA) and cyanoethylpullulan (CYEPL), a cyanoethylated polysaccharide which possesses a high dielectric constant (εr= 18.5 at 10 kHz). In these last two instances, the field-effect mobility surpasses the one measured on TFTs made on a SiO2 insulating layer. A strong correlation is found between the dielectric constant of the insulator and the field-effect mobility.
引用
收藏
页码:2013 / 2015
页数:3
相关论文
共 18 条
  • [1] THEORY OF THIN-FILM TRANSISTOR
    ANDERSON, JC
    [J]. THIN SOLID FILMS, 1976, 38 (02) : 151 - 161
  • [2] FIELD-EFFECT MOBILITY OF POLY(3-HEXYLTHIOPHENE)
    ASSADI, A
    SVENSSON, C
    WILLANDER, M
    INGANAS, O
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (03) : 195 - 197
  • [3] NEW SEMICONDUCTOR-DEVICE PHYSICS IN POLYMER DIODES AND TRANSISTORS
    BURROUGHES, JH
    JONES, CA
    FRIEND, RH
    [J]. NATURE, 1988, 335 (6186) : 137 - 141
  • [4] FIELD-EFFECT TRANSISTOR WITH DIPHTHALOCYANINE THIN-FILM
    CLARISSE, C
    RIOU, MT
    GAUNEAU, M
    LECONTELLEC, M
    [J]. ELECTRONICS LETTERS, 1988, 24 (11) : 674 - 675
  • [5] ELECTRICAL-PROPERTIES OF POLYACETYLENE POLYSILOXANE INTERFACE
    EBISAWA, F
    KUROKAWA, T
    NARA, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3255 - 3259
  • [6] FICHOU D, 1989, Patent No. 7610
  • [7] FICHOU D, 1989, ELECTRONIC PROPERTIE, V3, P386
  • [8] THIN-FILM TRANSISTORS BASED ON NICKEL PHTHALOCYANINE
    GUILLAUD, G
    MADRU, R
    ALSADOUN, M
    MAITROT, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) : 4554 - 4556
  • [9] FIELD-EFFECT TRANSISTORS BASED ON INTRINSIC MOLECULAR SEMICONDUCTORS
    GUILLAUD, G
    ALSADOUN, M
    MAITROT, M
    SIMON, J
    BOUVET, M
    [J]. CHEMICAL PHYSICS LETTERS, 1990, 167 (06) : 503 - 506
  • [10] THE OLIGOTHIOPHENE-BASED FIELD-EFFECT TRANSISTOR - HOW IT WORKS AND HOW TO IMPROVE IT
    HOROWITZ, G
    PENG, XZ
    FICHOU, D
    GARNIER, F
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) : 528 - 532