THIN-FILM TRANSISTORS BASED ON NICKEL PHTHALOCYANINE

被引：36

作者：

GUILLAUD, G

MADRU, R

ALSADOUN, M

MAITROT, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 09期

关键词：

D O I：

10.1063/1.343929

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4554 / 4556

页数：3

共 14 条

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MADRU, M ;

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ANDRE, JJ ;

SIMON, J .

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[9] A WELL-BEHAVED FIELD-EFFECT TRANSISTOR BASED ON AN INTRINSIC MOLECULAR SEMICONDUCTOR [J].

MADRU, R ;

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EVEN, R .

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