A WELL-BEHAVED FIELD-EFFECT TRANSISTOR BASED ON AN INTRINSIC MOLECULAR SEMICONDUCTOR

被引：89

作者：

MADRU, R

GUILLAUD, G

ALSADOUN, M

MAITROT, M

ANDRE, JJ

SIMON, J

EVEN, R

机构：

[1] INST C SADRON, F-67083 STRASBOURG, FRANCE

[2] ECOLE SUPER PHYS & CHIM IND, F-75231 PARIS 05, FRANCE

来源：

CHEMICAL PHYSICS LETTERS | 1988年 / 145卷 / 04期

关键词：

D O I：

10.1016/0009-2614(88)80018-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：343 / 346

页数：4

共 11 条

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