Deposition of tin sulfide thin films from novel, volatile (fluoroalkythiolato)tin(IV) precursors

被引：63

作者：

Hibbert, TG

Mahon, MF

Molloy, KC

Price, LS

Parkin, IP

机构：

[1] Univ Bath, Dept Chem, Bath BA2 7AY, Avon, England

[2] UCL, Dept Chem, London WC1H 0AJ, England

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2001年 / 11卷 / 02期

关键词：

D O I：

10.1039/b005863g

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Novel, volatile (fluoroalkylthiolato)tin(iv) precursors have been synthesised and (CF3CH2S)(4)Sn used to deposit tin sulfide films under APCVD (atmospheric pressure chemical vapour deposition) conditions. H2S is, however, required as co-reactant. Films deposited at 300-400 degreesC are composed of sulfur-deficient SnS2, films deposited at 450 and 500 degreesC comprise the sesquisulfide, Sn2S3, and the films deposited at 550 or 600 degreesC are sulfur-deficient SnS. The structure of [CF3(CF2)(5)CH2CH2S](4)Sn is also reported.

引用

页码：469 / 473

页数：5

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[1] SEMICONDUCTORS OF TYPE MEIIMEIVS3 [J].