共 41 条
Chromosomal organization governs the timing of cell type-specific gene expression required for spore formation in Bacillus subtilis
被引:34
作者:
Zupancic, ML
Tran, H
Hofmeister, AEM
机构:
[1] Univ Calif Berkeley, Dept Plant & Microbial Biol, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Mol & Cell Biol, Berkeley, CA 94720 USA
关键词:
D O I:
10.1046/j.1365-2958.2001.02331.x
中图分类号:
Q5 [生物化学];
Q7 [分子生物学];
学科分类号:
071010 ;
081704 ;
摘要:
During the early stages of spore formation in Bacillus subtilis, asymmetric division precedes chromosome segregation, such that the forespore transiently contains only about one-third of the genetic material surrounding the origin of replication. Shortly after septum formation, the transcription factor sigma (F) initiates forespore-specific gene expression that is essential for the proteolytic activation of pro-sigma (E) in the neighbouring mother cell. Moving the sigma (F)-dependent spoIIR gene from its original origin-proximal position to an ectopic origin-distal site caused a delay in spoIIR transcription, as well as delays and reductions in the proteolytic activation of pro-sigma (E) and sigma (E)-directed gene expression. These defects correlated with the accumulation of disporic sporangia, thus reducing sporulation efficiency in a manner that depended upon the distance that spoIIR had been moved from the origin-proximal third of the chromosome. A significant proportion of disporic sporangia exhibited sigma (E) activity in their central compartment, indicating that delays and reductions in sigma (E) activation can lead to the formation of a second septum at the opposite pole. These observations support a model in which chromosomal spoIIR position temporally regulates sigma (E) activation, thereby allowing for the rapid establishment of mother cell-specific gene expression that is essential for efficient spore formation. The implications of these findings for cell type-specific gene expression during the early stages of spore formation in B. subtilis are discussed.
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页码:1471 / 1481
页数:11
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