Oriented growth and band alignment at the CdTe/CdS interface

被引：28

作者：

Fritsche, J ^{[1
]}

Thissen, A ^{[1
]}

Klein, A ^{[1
]}

Jaegermann, W ^{[1
]}

机构：

[1] Darmstadt Univ Technol, Dept Mat & GeoSci, Div Surface Sci, D-64287 Darmstadt, Germany

来源：

THIN SOLID FILMS | 2001年 / 387卷 / 1-2期

关键词：

CdTe; CdS; interface; photoemission; band alignment;

D O I：

10.1016/S0040-6090(00)01733-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The CdTe/CdS interface has been investigated by photoemission and low energy electron diffraction. The growth of CdS on single crystalline CdTe substrates at elevated temperatures proceeds with the conservation of rotational symmetry. Initial results for the dependence of the band alignment on the crystallographic orientation based on calibrated core level binding energies are presented. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：158 / 160

页数：3

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