Adsorption and desorption of cetyl pyridinium ions at a tungsten-coated silicon wafer surface

被引:4
作者
Free, ML
Shah, DO
机构
[1] Univ Utah, Dept Engn Met, Salt Lake City, UT 84112 USA
[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[3] Univ Florida, Dept Anesthesiol, Gainesville, FL 32611 USA
关键词
adsorption; desorption; surfactants; wafer cleaning; particle removal;
D O I
10.1006/jcis.1998.5848
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The use of surfactants to reduce the number of residual particles following chemical-mechanical planarization during integrated circuit manufacturing is relatively new. Recent results using cetyl pyridinium chloride and other cationic surfactant molecules show that surfactants are very effective in reducing the number density of residual polishing particles; The effectiveness of the surfactants is related to their ability to adsorb on the substrate surface. The contact angle and spectroscopic data in this study show that cetyl pyridinium ions can be readily adsorbed or desorbed from a chemical-vapor-deposited tungsten surface by controlling the concentration of other cations in solution. The mechanism for surfactant desorption is Likely a competition between the cationic surfactant ions and other cations in solution. (C) 1998 Academic Press.
引用
收藏
页码:104 / 109
页数:6
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