Experiments and modeling of boron segregation to {311} defects and initial rapid enhanced boron diffusion induced by self-implantation in Si

被引：6

作者：

Saito, T ^{[1
]}

Xia, J ^{[1
]}

Kim, R ^{[1
]}

Aoki, T ^{[1
]}

Kobayashi, H ^{[1
]}

Kamakura, Y ^{[1
]}

Taniguchi, K ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect & Informat Syst, Suita, Osaka 5650871, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746406

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Boron segregation and transient enhanced diffusion (TED) of boron atoms during annealing were investigated under two types of wafers implanted with Si ions. We found the following facts: (1) Boron segregation to {311} defects has been observed at low temperature annealing. (2) {311} defects were formed in the area where the self-interstitial concentration exceeds 3x10(17)cm(-3). (3) Free self-interstitials in the region beyond the implanted range causes initial rapid enhanced diffusion prior to the onset of normal TED.

引用

页码：497 / 500

页数：4

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