Flat (11(2)over-bar0) GaN thin film on precisely offset-controlled (1(1)over-bar-02) sapphire substrate

被引：44

作者：

Imura, M

Hoshino, A

Nakano, K

Tsuda, M

Iwaya, M

Kamiyama, S

Amano, H

Akasaki, I

机构：

[1] Meijo Univ, 21st Century COE Program Nanofactory, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[2] Kyocera Corp, Single Crystal Div, Yokaichi, Shiga 5278555, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 10期

关键词：

AIN; GaN; nonpolar; a-GaN; r-sapphire; offset;

D O I：

10.1143/JJAP.44.7418

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high-quality thin (11 (2) over bar0) GaN layer with an atomically flat surface has been successfully grown on a. precisely offset-angle-controlled (1 (1) over bar 02) sapphire substrate by metal-organic vapor phase epitaxy. The insertion of an AlGaN layer between the underlying AlN layer and the GaN layer was found to improve the crystalline quality of the upper GaN layer.

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收藏

页码：7418 / 7420

页数：3

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